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1 MRF183R1 mrf183lsr1 motorola rf device data the rf mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 volt base station equipment. ? guaranteed performance at 945 mhz, 28 volts output power ? 45 watts pep power gain ? 11.5 db efficiency ? 33% imd ? - 28 dbc ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? s - parameter characterization at high bias levels ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr @ 28 vdc, 945 mhz, 45 watts cw ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc drain - gate voltage (rgs = 1 meg ohm) v dgr 65 vdc gate - source voltage v gs 20 vdc drain current - continuous i d 5 adc total device dissipation @ t c = 70 c derate above 70 c p d 86 0.67 w w/ c storage temperature range t stg - 65 to +200 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.5 c/w note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf183/d motorola semiconductor technical data MRF183R1 mrf183lsr1 1.0 ghz, 45 w, 28 v lateral n - channel broadband rf power mosfets case 360b - 05, style 1 ni - 360 MRF183R1 case 360c - 05, style 1 ni - 360s mrf183lsr1 ? motorola, inc. 2003 g d s rev 15 archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
MRF183R1 mrf183lsr1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain - source breakdown voltage (v gs = 0 vdc, i d = 50 adc) bv dss 65 - - vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss - - 1 adc gate - source leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss - - 1 adc on characteristics gate quiescent voltage (v ds = 28 vdc, i d = 250 madc) v gs(q) 3 - 5 vdc drain - source on - voltage (v gs = 10 v, i d = 3 a) v ds(on) - 0.7 - vdc forward transconductance (v ds = 10 vdc, i d = 5 adc) g fs - 2 - s dynamic characteristics input capacitance (v ds = 28 v, v gs = 0, f = 1 mhz) c iss - 82 - pf output capacitance (v ds = 28 v, v gs = 0, f = 1 mhz) c oss - 38 - pf reverse transfer capacitance (v ds = 28 v, v gs = 0, f = 1 mhz) c rss - 4.5 - pf functional tests (in motorola test fixture, 50 ohm system) (v dd = 28 vdc, p out = 45 watts pep, f1 = 945.0, f2 = 945.1 mhz, i dq = 250 ma) two - tone common source amplifier power gain g ps 11.5 13.5 - db two - tone drain efficiency 33 38 - % 3rd order intermodulation distortion imd - -32 -28 dbc input return loss irl 9 14 - db (v dd = 28 vdc, p out = 45 watts pep, f1 = 930.0, f2 = 930.1 mhz, and f1 = 960.0, f2 = 960.1 mhz, i dq = 250 ma) two - tone common source amplifier power gain g ps - 13 - db two - tone drain efficiency - 35 - % 3rd order intermodulation distortion imd - -32 - dbc input return loss irl - 12 - db output mismatch stress (v dd = 28 vdc, p out = 45 watts cw, i dq = 250 ma, f = 945 mhz, vswr 5:1 at all phase angles) no degradation in output power before and after test archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
3 MRF183R1 mrf183lsr1 motorola rf device data r3 4.7 m , 1/4 w carbon z1 t - line, 0.200 x 0.080 z2 t - line, 0.570 x 0.120 z3 t - line, 0.610 x 0.320 z4 t - line, 0.160 x 0.320 x 0.620 tapered line z5 t - line, 0.650 x 0.620 z6 t - line, 0.020 x 0.620 z7 t - line, 0.270 x 0.320 z8 t - line, 0.130 x 0.320 z9 t - line, 0.370 x 0.080 z10 t - line, 1.050 x 0.080 z11 t - line, 0.290 x 0.080 board 0.030 glass teflon, r = 2.55 arlon - gx - 0300 - 55 - 22 b1 short ferrite bead b2 long ferrite bead c1 10 f, 50 v electrolytic capacitor c2, c14 0.1 f chip capacitor c3 1000 pf chip capacitor c4, c13 47 pf chip capacitor c5, c12 47 pf chip capacitor c6, c11 0.8 - 8.0 pf trim capacitor c7, c8 10 pf chip capacitor c9, c10 10 pf chip capacitor c15 100 pf chip capacitor c16 250 f, 50 v electrolytic capacitor l1, l2 5 turns, 24 awg, id 0.059 r1 120 , 1/4 w carbon r2 18 k , 1/4 w carbon figure 1. mrf183lsr1 two tone test circuit schematic r1 c5 rf input rf output v gg v dd c1 r3 r2 b1 c2 c3 c4 l1 z5 z4 z3 c6 z2 z1 dut z7 c10 c9 z8 z9 c11 z10 c12 z11 l2 c13 b2 c14 c15 c16 c7 c8 z6 + + archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
MRF183R1 mrf183lsr1 4 motorola rf device data p out , output power (watts) p out , output power (watts) imd, intermodulation distortion (dbc) p out , output power (watts) pep ?20 ?30 ?45 ?50 0.1 1 10 100 ?20 020304050 p out , output power (watts) pep imd, intermodulation distortion (dbc) typical characteristics figure 2. intermodulation distortion products versus output power figure 3. intermodulation distortion versus output power ?30 ?40 ?50 ?60 ?70 5th 7th v dd = 28 vdc i dq = 250 ma f1 = 945 mhz f2 = 945.1 mhz i dq = 75 ma 150 ma 450 ma 16 14.5 13 1 10 100 g pe , power gain (db) figure 4. power gain versus output power 50 20 0 0 1.5 3 p in , input power (watts) p out , output power (watts) figure 5. output power versus input power v dd = 28 vdc i dq = 75 ma f = 945 mhz 80 15 19 23 35 v ds , drain voltage (volts) p out , output power (watts) figure 6. output power versus drain bias supply voltage 60 40 0 50 0 0.5 1 5 v gs , gate bias (volts) figure 7. output power versus gate bias supply voltage 30 10 0 2 3.5 g pe p out typical device shown v gs(th) typical = 3.13 v 3rd order 10 v dd = 28 vdc f1 = 945 mhz f2 = 945.1 mhz 250 ma ?25 ?40 ?35 285 ma 150 ma v dd = 28 vdc f = 945 mhz 75 ma 15.5 g pe , power gain (db) 40 10 30 60 0.5 2 3.5 16 12 15 10 14 1.0 w 2.0 w p in = 4.0 w v dd = 28 vdc p in = 1.5 w f1 = 945 mhz 17 21 31 27 33 25 29 70 50 20 40 20 2.5 3 4 4.5 1.5 i dq = 450 ma ?35 ?45 ?55 ?65 ?25 15 25 35 545 14 13.5 15 11 13 30 10 45 25 5 35 15 1 2.5 4 90 v dd = 28 vdc i dq = 75 ma f1 = 945 mhz ?55 archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
5 MRF183R1 mrf183lsr1 motorola rf device data 60 30 0 ?40 10 20 30 40 p in , input power (dbm) p out , output power (dbm) fundamental 3rd order v ds = 26 vdc i d = 1.8 a f1 = 945 mhz f2 = 945.1 mhz 15 25 35 10 ?30 50 20 40 ?10 ?20 i d , drain current (ma) 4000 3000 2000 0 01 3 5 6 v gs , gate voltage (volts) 60 800 880 900 1000 f, frequency (mhz) p out , output power (watts) typical characteristics figure 8. output power versus frequency figure 9. drain current versus gate voltage 50 30 10 0 v ds = 28 vdc 120 100 60 0 0102030 50 v ds , drain?source voltage (volts) c, capacitance (pf) figure 10. capacitance versus voltage v gs = 0 vdc f = 1.0 mhz 3 1 0 010203040 v ds , drain voltage (volts) , drain current (amps) figure 11. class a safe operating region t j = 175 figure 12. class a third order intercept point typical device shown 0.1 w 1.0 w p in = 2.0 w v dd = 28 vdc i dq = 75 ma single tone 840 980 940 960 40 20 24 3500 2500 1000 20 51525 4045 35 c iss c oss c rss 51525 4.5 2.5 0.5 4 2 3.5 1.5 i d 0.5 w 500 1500 80 40 860 820 920 35 t case = 70 archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
MRF183R1 mrf183lsr1 6 motorola rf device data 14 925 945 950 f, frequency (mhz) g t , gain (db) figure 13. broadband power performance of mrf183lsr1 13 9 6 935 960 965 11 7 940 930 955 12 8 10 , efficiency (%) 45 35 ?32 ?33 ?34 input vswr 1.00 2.00 3.00 40 ?30 ?31 intermodulation distortion (dbc) gain imd vswr figure 14. mrf183lsr1 two tone test circuit component parts layout typical characteristics to gate bias feedthru r1 r2 c1 c2 c3 c4 ind1 c8 c7 c5 c6 b2 c9 c10 ind2 c11 c13 c14 c15 c16 c12 mrf183s b1 to drain bias feedthru archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
7 MRF183R1 mrf183lsr1 motorola rf device data z in f = 930 mhz z 0 = 10 ? f mhz z in ohms z ol * ohms 930 1.10 + j0.93 2.60 ? j0.13 945 1.10 + j0.78 2.70 ? j0.28 960 1.10 + j0.60 2.80 ? j0.42 note: z ol * was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. figure 15. series equivalent input and output impedance z in = conjugate of source impedance. z ol * = conjugate of the load impedance at a given output power, voltage, and current conditions. archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
MRF183R1 mrf183lsr1 8 motorola rf device data table 1. typical common source s - parameters (v ds = 13.5 v) i d = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | |s 21 | |s 12 | |s 22 | 20 0.954 - 157 29.58 100 0.017 11 0.778 - 161 30 0.941 - 164 19.73 96 0.017 8 0.796 - 168 40 0.922 - 168 14.84 93 0.017 4 0.804 - 170 50 0.907 - 171 11.94 91 0.017 3 0.808 - 172 60 0.903 - 172 9.75 89 0.017 2 0.812 - 173 70 0.899 - 173 8.34 88 0.017 0 0.814 - 174 80 0.898 - 174 7.29 86 0.017 -1 0.816 - 175 90 0.896 - 175 6.49 85 0.017 -2 0.816 - 175 100 0.897 - 175 5.83 84 0.017 -2 0.817 - 175 150 0.895 - 177 3.82 79 0.017 -6 0.822 - 176 200 0.898 - 178 2.84 74 0.016 -9 0.828 - 176 250 0.902 - 178 2.24 70 0.016 -11 0.835 - 176 300 0.908 - 179 1.84 66 0.015 -14 0.842 - 176 350 0.905 - 179 1.55 62 0.015 -16 0.850 - 176 400 0.913 - 180 1.32 58 0.014 -18 0.861 - 176 450 0.920 180 1.15 54 0.014 -18 0.865 - 176 500 0.924 179 1.01 51 0.013 -20 0.874 - 177 550 0.922 179 0.89 47 0.013 -21 0.881 - 177 600 0.931 178 0.80 44 0.012 -21 0.889 - 177 650 0.935 178 0.72 41 0.011 -20 0.895 - 177 700 0.935 177 0.64 38 0.011 -17 0.901 - 178 750 0.937 177 0.59 37 0.012 -18 0.905 - 178 800 0.940 176 0.54 33 0.012 -20 0.913 - 178 850 0.943 176 0.50 30 0.012 -29 0.919 - 179 900 0.945 175 0.46 28 0.010 -33 0.924 - 179 950 0.947 174 0.43 26 0.009 -34 0.930 - 180 1000 0.947 174 0.40 24 0.008 -29 0.935 180 1050 0.947 173 0.37 21 0.007 -24 0.939 179 1100 0.952 172 0.35 19 0.007 -19 0.944 179 1150 0.949 172 0.32 17 0.007 -17 0.948 178 1200 0.946 171 0.30 14 0.006 -16 0.948 177 1250 0.954 170 0.28 12 0.006 -13 0.953 177 1300 0.952 170 0.27 9 0.006 -12 0.950 176 1350 0.949 169 0.26 9 0.006 -10 0.951 176 1400 0.948 168 0.23 8 0.005 -7 0.953 175 1450 0.948 168 0.22 6 0.004 4 0.948 174 1500 0.940 167 0.21 4 0.004 19 0.944 174 archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
9 MRF183R1 mrf183lsr1 motorola rf device data table 2. typical common source s - parameters (v ds = 28 v) i d = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | |s 21 | |s 12 | |s 22 | 20 0.968 - 132 45.79 113 0.014 24 0.579 - 145 30 0.953 - 145 31.75 106 0.015 17 0.623 - 157 40 0.921 - 154 24.33 99 0.015 12 0.648 - 161 50 0.904 - 159 19.68 95 0.015 7 0.661 - 164 60 0.898 - 163 16.11 92 0.015 5 0.670 - 166 70 0.890 - 165 13.79 90 0.015 2 0.677 - 167 80 0.886 - 167 12.06 87 0.015 1 0.681 - 168 90 0.886 - 168 10.71 86 0.015 -1 0.684 - 169 100 0.887 - 169 9.61 84 0.015 -3 0.688 - 169 150 0.886 - 172 6.26 76 0.015 -9 0.706 - 170 200 0.890 - 174 4.59 69 0.014 -13 0.724 - 170 250 0.898 - 175 3.57 64 0.014 -17 0.744 - 169 300 0.906 - 176 2.88 59 0.013 -19 0.764 - 169 350 0.908 - 177 2.37 54 0.012 -23 0.785 - 169 400 0.915 - 178 2.00 49 0.011 -24 0.807 - 170 450 0.924 - 178 1.71 45 0.010 -25 0.821 - 170 500 0.930 - 179 1.48 41 0.010 -26 0.838 - 171 550 0.928 - 180 1.28 37 0.009 -26 0.851 - 171 600 0.937 180 1.13 33 0.008 -25 0.865 - 172 650 0.944 179 1.00 30 0.007 -22 0.878 - 172 700 0.943 178 0.88 27 0.008 -14 0.888 - 173 750 0.946 178 0.81 25 0.008 -15 0.895 - 173 800 0.949 177 0.73 22 0.009 -17 0.906 - 174 850 0.954 177 0.67 20 0.009 -28 0.912 - 175 900 0.953 175 0.61 18 0.007 -34 0.919 - 175 950 0.957 175 0.56 15 0.005 -32 0.927 - 176 1000 0.957 174 0.51 13 0.004 -22 0.934 - 177 1050 0.957 174 0.48 10 0.004 -11 0.939 - 178 1100 0.962 173 0.45 8 0.004 -2 0.945 - 178 1150 0.959 172 0.41 7 0.004 3 0.950 - 179 1200 0.955 171 0.39 4 0.004 9 0.950 - 180 1250 0.962 170 0.36 2 0.004 13 0.955 180 1300 0.959 170 0.33 0 0.004 17 0.953 179 1350 0.956 169 0.31 -1 0.004 25 0.954 178 1400 0.954 168 0.29 -4 0.004 32 0.957 177 1450 0.955 168 0.28 -6 0.004 46 0.952 177 1500 0.948 167 0.26 -7 0.004 56 0.948 176 archived by freescale sem iconductor, inc. 2005 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5
MRF183R1 mrf183lsr1 10 motorola rf device data notes a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5 archived by freescale sem iconductor, inc. 2005
11 MRF183R1 mrf183lsr1 motorola rf device data package dimensions case 360b - 05 issue f ni - 360 MRF183R1 case 360c - 05 issue d ni - 360s mrf183lsr1 g e c seating plane dim a min max min max millimeters 0.795 0.805 20.19 20.45 inches b 0.225 0.235 5.72 5.97 c 0.125 0.175 3.18 4.45 d 0.210 0.220 5.33 5.59 e 0.055 0.065 1.40 1.65 f 0.004 0.006 0.10 0.15 g 0.562 bsc 14.28 bsc h 0.077 0.087 1.96 2.21 k 0.220 0.250 5.59 6.35 m 0.355 0.365 9.02 9.27 q 0.125 0.135 3.18 3.43 style 1: pin 1. drain 2. gate 3. source 1 2 3 q 2x m a m aaa b m t notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. r 0.227 0.233 5.77 5.92 s 0.225 0.235 5.72 5.97 n 0.357 0.363 9.07 9.22 aaa 0.005 ref 0.13 ref bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref m a m bbb b m t d 2x k 2x b b (flange) h f m a m ccc b m t m a m bbb b m t a m (insulator) a t n (lid) m a m ccc b m t r (lid) s (insulator) m a m aaa b m t style 1: pin 1. drain 2. gate 3. source dim a min max min max millimeters 0.375 0.385 9.53 9.78 inches b 0.225 0.235 5.72 5.97 c 0.105 0.155 2.67 3.94 d 0.210 0.220 5.33 5.59 e 0.035 0.045 0.89 1.14 f 0.004 0.006 0.10 0.15 h 0.057 1.45 k 0.085 0.115 2.16 2.92 m 0.355 0.365 9.02 9.27 2 0.067 1.70 1 notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. s 0.225 0.235 5.72 5.97 aaa 0.005 ref 0.13 ref bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref h f m a m ccc b m t r (lid) s (insulator) m a m aaa b m t m a m bbb b m t d 2x b b (flange) a (flange) a k 2x n 0.357 0.363 9.07 9.22 r 0.227 0.23 5.77 5.92 e c seating plane m a m ccc b m t m a m bbb b m t m (insulator) t n (lid) pin 3 a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5 archived by freescale sem iconductor, inc. 2005
MRF183R1 mrf183lsr1 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2003 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf183/d
a r c h i v e d 2 0 0 5 a r c h i v e d 2 0 0 5 archived by freescale sem iconductor, inc. 2005

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